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IRG4BC15UD-SPBF irg4bc15ud-lpbf insulated gate bipolar transistor with ultrafast soft recovery diode features e g n-channel c v ces = 600v v ce(on) typ. = 2.02v @v ge = 15v, i c = 7.8a thermal resistance ultrafast copack igbt benefits www.irf.com 1 ultrafast: optimized for high frequencies from10 to 30 khz in hard switching ? igbt co-packaged with ultra-soft-recovery antiparallel diode industry standard d 2 pak & to-262 packages lead-free best value for appliance and industrial applications high noise immune "positive only" gate drive- negative bias gate drive not necessary for low emi designs- requires little or no snubbing single package switch for bridge circuit applications compatible with high voltage gate driver ic's allows simpler gate drive d 2 pak irg4bc15ud-s to-262 irg4bc15ud-l parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 14 i c @ t c = 100c continuous collector current 7.8 i cm pulsed collector current 42 a i lm clamped inductive load current 42 i f @ t c = 100c diode continuous forward current 4.0 i fm diode maximum forward current 16 v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 49 p d @ t c = 100c maximum power dissipation 19 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
parameter min. typ. max. units r jc junction-to-case - igbt ??? ??? 2.7 r jc junction-to-case - diode ??? ??? 7.0 c/w r cs case-to-sink, flat, greased surface ??? 0.50 ??? r ja junction-to-ambient, typical socket mount ??? ??? 80 r ja junction-to-ambient (pcb mount, steady state) ??? ??? 40 wt weight ??? 2 (0.07) ??? g (oz) 08/27/04 pd - 95781

parameter min. typ. max. units conditions q g total gate charge (turn-on) ??? 23 35 i c = 7.8a qge gate - emitter charge (turn-on) ??? 4.0 6.0 nc v cc = 400v q gc gate - collector charge (turn-on) ??? 9.6 14 v ge = 15v t d(on) turn-on delay time ??? 17 ??? t j = 25c t r rise time ??? 20 ??? ns i c = 7.8a, v cc = 480v t d(off) turn-off delay time ??? 160 240 v ge = 15v, r g = 75 ? t f fall time ??? 83 120 energy losses include "tail" and e on turn-on switching loss ??? 0.24 ??? diode reverse recovery. e off turn-off switching loss ??? 0.26 ??? mj e ts total switching loss ??? 0.50 0.63 t d(on) turn-on delay time ??? 16 ??? t j = 150c, t r rise time ??? 21 ??? ns i c = 7.8a, v cc = 480v t d(off) turn-off delay time ??? 180 ??? v ge = 15v, r g = 75 ? t f fall time ??? 220 ??? energy losses include "tail" and e ts total switching loss ??? 0.76 ??? mj diode reverse recovery. l e internal emitter inductance ??? 7.5 ??? nh measured 5mm from package c ies input capacitance ??? 410 ??? v ge = 0v c oes output capacitance ??? 37 ??? pf v cc = 30v c res reverse transfer capacitance ??? 5.3 ??? ? = 1.0mhz t rr diode reverse recovery time ??? 28 42 ns t j = 25c ??? 38 57 t j = 125c i f = 4.0a i rr diode peak reverse recovery current ??? 2.9 5.2 a t j = 25c ??? 3.7 6.7 t j = 125c v r = 200v q rr diode reverse recovery charge ??? 40 60 nc t j = 25c ??? 70 110 t j = 125c di/dt 200a/s di (rec)m /dt diode peak rate of fall of recovery ??? 280 ??? a/s t j = 25c during t b ??? 240 ??? t j = 125c parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ??? ??? v v ge = 0v, i c = 250a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ??? 0.63 ??? v/c v ge = 0v, i c = 1.0ma v ce(on) collector-to-emitter saturation voltage ??? 2.02 2.4 i c = 7.8a v ge = 15v ??? 2.56 ??? v i c = 14a ??? 2.21 ??? i c = 7.8a, t j = 150c v ge(th) gate threshold voltage 3.0 ??? 6.0 v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage ??? -10 ??? mv/c v ce = v ge , i c = 250a g fe forward transconductance 4.1 6.2 ??? s v ce = 100v, i c = 7.8a i ces zero gate voltage collector current ??? ??? 250 a v ge = 0v, v ce = 600v ??? ??? 1400 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop ??? 1.5 1.8 v i c = 4.0a ??? 1.4 1.7 i c = 4.0a, t j = 150c i ges gate-to-emitter leakage current ??? ??? 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) electrical characteristics @ t j = 25c (unless otherwise specified)

0.1 1 10 100 0.1 1 10 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20s pulse width ge t = 25 c j t = 150 c j 0.1 1 10 100 5.0 10.0 15.0 20.0 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 150 c j t = 25 c j 0.1 1 10 100 f , frequency ( khz ) 0.00 2.00 4.00 4.00 6.00 8.00 8.00 10.00 12.00 12.00 0.00 4.00 8.00 12.00 l o a d c u r r e n t ( a ) duty cycle : 50% tj = 125c tsink = 90c ta = 55c gate drive as specified turn-on losses include effects of reverse recovery power dissipation = 11w for heatsink mount power dissipation = 1.8w for typical pcb socket mount 60% of rated voltage ideal diodes

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" # ! 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 2 4 6 8 10 12 14 t , case temperature ( c) maximum dc collector current(a) c -60 -40 -20 0 20 40 60 80 100 120 140 t j , junction temperature (c) 1.0 2.0 3.0 4.0 v c e , c o l l e c t o r - t o e m i t t e r v o l t a g e ( v ) i c = 14a v ge = 15v 80s pulse width i c = 7.8a i c = 3.9a

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! -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.1 1 10 t o t a l s w i t c h i n g l o s s e s ( m j ) r g = 75 ? v ge = 15v v cc = 480v i c = 14a i c = 7.8a i c = 3.9a 0 5 10 15 20 25 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 7.8a cc c 1 10 100 0 200 400 600 800 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res 0 10 20 30 40 50 r g , gate resistance ( ? ) 0.42 0.44 0.46 0.48 t o t a l s w i t c h i n g l o s s e s ( m j ) v cc = 480v v ge = 15v t j = 25c i c = 7.8a

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%( 0.1 1 10 1 00 0.0 1.0 2.0 3.0 4.0 5.0 6.0 fm forward voltage drop - v (v) t = 150c t = 125c t = 25c j j j &" #)& 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 c , c a p a c i t a n c e ( p f ) v ge = 20v t j = 125 safe operating area 2 4 6 8 10 12 14 16 i c , collector current (a) 0.0 0.4 0.8 1.2 1.6 2.0 t o t a l s w i t c h i n g l o s s e s ( m j ) r g = 75 ? tj = 150c v ge = 15v v cc = 480v

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2 0 2 5 3 0 3 5 4 0 4 5 5 0 100 1000 f di /dt - (a/s) i = 8.0a i = 4.0a f f v = 200v t = 125c t = 25c r j j 0 2 4 6 8 1 0 1 2 1 4 100 1000 f i = 8.0a i = 4.0a v = 200v t = 125c t = 25c r j j di /dt - (a/s) f f 0 40 80 1 20 1 60 2 00 100 1000 f di /dt - (a/s) i = 8.0a i = 4.0a v = 200v t = 125c t = 25c r j j f f 100 1 000 100 1000 f di /dt - (a/s) a i = 8.0a i = 4.0a v = 200v t = 125c t = 25c r j j f f

same type device as d.u.t. d.u.t. 430f 80% of vce

t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+5 s vce ic d t 90% vge + vge eoff =

!"# vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery waveforms ic vpk 10% vcc irr 10% irr vc c trr qrr = trr tx id dt

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vg gate signal device under tes t current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 19. clamped inductive load test circuit figure 20. pulsed collector current test circuit
figure 18e. macro waveforms for figure 18a's test circuit

dimensions are shown in millimeters (inches) note: "p" in as s embly line pos ition indicates "l ead-f ree" f 530s t his is an irf530s with l ot code 8024 assembled on ww 02, 2000 in the assembly line "l" assembly lot code int ernational rect ifier logo part number dat e code ye ar 0 = 2000 week 02 line l f 530s a = as s e mb l y s i t e code we e k 02 p = de s i gn at e s l e ad - f r e e product (opt ional) rectifier international logo lot code as s e mb l y year 0 = 2000 dat e code part number

to-262 part marking information to-262 package outline dimensions are shown in millimeters (inches) assembly lot code rect if ier int ernational as s e mb le d on ww 19, 1997 note: "p" in as sembly line pos ition indicates "lead-f ree" in the assembly line "c" logo t his is an irl3103l lot code 1789 example: line c dat e code week 19 ye ar 7 = 1997 part number part number logo lot code assembly international rect if ier product (optional) p = de signates lead-free a = assembly site code week 19 ye ar 7 = 1997 dat e code or

data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/04 notes: repetitive rating: v ge =20v; pulse width limited by maximum junction temperature. v cc =80%(v ces ), v ge =20v, l=10h, r g = 75 ? pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot. this only applies to to-262 package. this applies to d 2 pak, when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994.

dimensions are shown in millimeters (inches) 3 4 4 trr f eed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl f eed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957 ) 23.90 (.941 ) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362 ) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.

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